FIB Damage in Silicon: Amorphization or Redeposition?
نویسندگان
چکیده
منابع مشابه
SSRM characterisation of FIB induced damage in silicon
Scanning spreading resistance microscopy (SSRM) has been applied to study focused ion beam (FIB) induced damage in silicon in dependence on ion irradiation doses from 10 cm to 2⋅10 cm. Starting from the lowest dose, SSRM detects increasing spreading resistance (SR) with increasing dose. For doses from 2⋅10 cm to 4⋅10 cm, a slight decrease of SR is measured whereas for higher doses SR again slig...
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Crystalline silicon (c-Si) is partially amorphized in Focused Ion Beam (FIB) TEM lamella preparation. A 30kV Ga beam with a small glancing incident results in a 20-30nm amorphous layer [1, 2]. The precise mechanisms remain uncertain and a damage prediction can hardly be made. In this study, a Binary Collision Approximation (BCA) software is employed to simulate c-Si amorphization in various Ga-...
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ژورنال
عنوان ژورنال: Microscopy and Microanalysis
سال: 2002
ISSN: 1431-9276,1435-8115
DOI: 10.1017/s1431927602101577